Digital Devices Based on Complementary Junction Field Effect Transistors

Now CMOS transistors are widespread component basis for digital integrated circuits. But its have a disadvantage that is high sensitiveness to environment effects such as temperature and radiation. The disadvantage restrains using CMOS IC in electronics equipment worked in extremal conditions. There is a alternative component basis that is junction field effect transistors (JFET) which possesses more high resistance to environment effects. The cause of the stability is physical nature of JFET, namely electric charges are carried by majority carriers and in a depth of semiconductor as opposed to CMOS transistor, which has a current, carried by minority carriers and on surface of semiconductor. JFET is appropriate to base element of radiation hardened Integrated Circuits. Complexity and inefficiency schematic methods of JFET logic gate design do not allow widely using JFET in area of digital IC. There is a fact that JFET gate's control voltage has a polarity that is reversal of polarity of drain voltage. That fact results in necessity to have two voltage supply sources and complex schemes of a matching of a logic level voltage between JFET gate's inputs and outputs. Given review introduces schematic methods of developing of a logic gates based on complementary JFET (CJFET) that are free against above disadvantages. Namely, it works with only one voltage supply source, without shift of logical level of voltage between gate's input and output. And the CJFET gates have micro-power ability, the same as CMOS gates: its work without power drain in static states.